Full Description

Scope: This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Cross References:
ISO 15247:2015
ISO 24173


All current amendments available at time of purchase are included with the purchase of this document.

Product Details

Published: 05/10/2019 ISBN(s): 9780580964138 Number of Pages: 26 File Size: 1 file , 5.4 MB Product Code(s): 30351626, 30351626, 30351626 Note: This product is unavailable in United Kingdom