IEEE 1160 : 1993
IEEE 1160 : 1993
STANDARD TEST PROCEDURES FOR HIGH-PURITY GERMANIUM CRYSTALS FOR RADIATION DETECTORS
Institute of Electrical & Electronics Engineers
Table of Contents
1 Overview
1.1 Scope
1.2 Purpose
2 References
3 Letter symbols
4 Introduction
5 Sample preparation and measurement of net
electrically active impurity concentration modulus
(NA - ND)
5.1 Sample preparation for van der Pauw measurements
5.2 Measurement and analysis
5.3 Spatial dependence of (NA - ND)
6 Deep-level transient spectroscopy (DLTS) for the
characterization of point-defect trapping centers
(NT)
6.1 Equipment
6.2 Sample selection and preparation for DLTS
6.3 Measurement procedure
6.4 Majority-carrier deep levels in p-type HPGe
6.5 Majority-carrier deep levels in n-type HPGe
7 Crystallographic properties
7.1 Crystallographic orientation
7.2 Sample preparation
7.3 Reporting
8 Bibliography
Figures
5.2 f(RAB,CD/RBC,DA) vs RAB,CD/RBC,DA
5.3 Factor r for n-type HPGe, two crystallographic
5.4 Factor r for p-type HPGe
6.1 DLTS waveforms and gate timing
6.2 Delta Vc/Vp waveforms
Table
1 Majority-carrier deep levels in p-type HPGe
Annex A
Tables
A1 Round-robin measurements of n-type sample
A2 Round-robin measurements of p-type sample
A3 Magnetic fields used for measurements and r values
for n-type and p-type HPGe
A4 Average values and standard deviations, whole-slice
measurements
A5 Supplementary data, n-type slice - laboratory no.
4, procedure B
A6 p-Type data: direction of transient
A7 Averages for the measured drift mobility in units
of 10 to the power 4 cm squared per volt per second
Abstract
Establishes uniform procedures for measurements and analyses in the determination and reporting of bulk properties relevant to geranium radiation detector fabrication and performance. Coverage includes letter symbols, crystallographic properties and detailed diagrams.
General Product Information
| Document Type | Standard |
| Status | Current |
| Publisher | Institute of Electrical & Electronics Engineers |
